Hitachi Power Semiconductor Device Ltd. and Sagar Semiconductors Pvt. have signed a memorandum of understanding to conduct joint marketing for high power devices such as IGBTs and SiC, new product development and technology transfer of high voltage diode. The collaboration aims to advance India’s semiconductor landscape and contribute to the ‘Make-in-India’ initiative.
HPSD and Sagar Semi will advance their joint efforts in marketing high-voltage, high-power SiC and IGBT products, with Sagar Semi aiming to augment its offerings in MOSFETs and IGBTs through the collaboration.
The partnership also encompasses development of new products and technologies, with focus on sectors like white goods, energy storage solutions and railways.
Sagar Semi is aiming to set up a manufacturing facility that will produce high-voltage semiconductors, such as high-voltage diodes for the automotive industry. HPSD has agreed to a technical transfer for end-to-end manufacturing of these devices.